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SMD Type
NPN Silicon Epitaxial Transistor 2SD1584-Z
TO-252
+0.15 1.50 -0.15
Transistors
Unit: mm
+0.1 2.30-0.1 +0.8 0.50-0.7
Features
Low VCE(sat).
+0.2 9.70 -0.2
+0.15 6.50-0.15 +0.2 5.30-0.2
+0.1 0.80-0.1
+0.15 0.50 -0.15
0.127 max
2.3
+0.15 4.60-0.15
+0.1 0.60-0.1
+0.28 1.50 -0.1
+0.25 2.65 -0.1
+0.15 5.55 -0.15
1 Base 2 Collector 3 Emitter
Absolute Maximum Ratings Ta = 25
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector Current (pulse) *1 Total power dissipation Ta = 25 *2 Junction temperature Storage temperature * 1Pulse Test PW 10ms, Duty Cycle 50%. Symbol VCBO VCEO VEBO IC ICP PT Tj Tstg Rating 60 60 7 3 5 2 150 -55 to +150 Unit V V V A A W
*2 when mounted on ceramic substrate of 7.5cm2 X0.7mm
3.80
High hFE.
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1
SMD Type
2SD1584-Z
Electrical Characteristics Ta = 25
Parameter Collector cutoff current Emitter cutoff current Symbol ICBO IEBO Testconditons VCB = 60 V, IE = 0 VEB = 5 V, IC = 0 VCE = 5 V, IC = 50 mA DC current gain * hFE VCE = 5 V, IC = 500 mA VCE = 5 V, IC = 3A Collector saturation voltage * Base saturation voltage * Gain bandwidth product Output capacitance Turn-on time Storage time Fall time * Pulsed: PW 350 is, duty cycle 2% VCE(sat) IC = 2.0 A, IB = 20 mA VBE(sat) IC = 2.0 A, IB = 20 mA fT Cob ton tstg tf VCE = 5 V, IE = -100 mA VCB = 10 V, IE = 0, f = 1.0 MHz IC = 2 A,VCC = 10 V IB1=-IB2=20 mA RL=5U
Transistors
Min
Typ
Max 10 10
Unit iA iA
600 800 500
1650 1800 1400 0.25 0.8 0.5 1.2 V V MHz pF is is is 3200
50
120 20 0.9 2.6 1
hFE Classification
Marking hFE M 800 1600 L 1000 2000 K 1600 3200
2
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